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Hot bending test of a PV cell sample (indoor)

Methodology

Caractérisation de wafer silicium de qualité PV par flexion 4 points à chaud

http://durasol.fr/IMG/arton19.jpg

Caracteristics

Sample size : 10 mm x 50 mm
Sample temperature : up to 1100°C
Bending : up to 10 N

Expertise

*Modelling of the ductile behaviour of monocrystalline silicon at high temperatures.
*Simulation of residual stresses caused by solidification.

Results

*Detection of the effects of the applied temperature and deformation ratio on the ductile behaviour.
*Crystal viscoplasticity model.

References

Solarforce, CEA, EDF

Applications

*Identification of parameters to model the plasticity of silicon at high temperatures

Localisation

Partner
LaMCoS DURASOL room

Institution
LaMCoS, CNRS UMR 5259, INSA LYON
20 Av. A. Einstein - 69621 Villeurbanne Cedex - France

Contact
Daniel NELIAS / Franck LEGRAND
04 72 43 84 90 / 04 72 43 87 28
Daniel.Nelias@insa-lyon.fr, Franck.Legrand@insa-lyon.fr

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